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original mosfet transistors 10N80 10A/800V TO-220F  N channel power mosfet JFFM10N80C
  • original mosfet transistors 10N80 10A/800V TO-220F  N channel power mosfet JFFM10N80C

original mosfet transistors 10N80 10A/800V TO-220F N channel power mosfet JFFM10N80C

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Meorient Import & Export  Co.LTD
Meorient Import & Export Co.LTD
China - Hangzhou
Trading Company
Trade Capacity
Export Percentage
Nearest Port
Hangzhou,Shanghai
Accepted Delivery Terms
Employees
5-10人
Accepted Payment Currency
USD,CNY
Average Lead Time
45 Day(s)
Certifications
Product Specifications
--
Product Description
Overview
Quick Details
Model Number:
JFFM10N80C
Type:
MOSFET 
Place of Origin:
Guangdong, China
Brand Name:
OEM/ODM
Package Type:
Throught Hole
Application:
MOSFET driver
Supplier Type:
Original manufacturer, ODM
Media Available:
datasheet, Photo
Brand:
MOSFET Transistor 10N80 10A/800V TO-220F
Current - Collector (Ic) (Max):
40A
Voltage - Collector Emitter Breakdown (Max):
800V
Vce Saturation (Max) @ Ib, Ic:
5v
Current - Collector Cutoff (Max):
40A
Frequency - Transition:
PLEASE REFER TO DATASHEET
Operating Temperature:
-55 to +150℃
Mounting Type:
Through Hole
Package / Case:
TO-220F
Resistor - Base (R1):
PLEASE REFER TO DATASHEET
Resistor - Emitter Base (R2):
PLEASE REFER TO DATASHEET
FET Type:
PLEASE REFER TO DATASHEET
FET Feature:
Super Junction
Drain to Source Voltage (Vdss):
800V
Current - Continuous Drain (Id) @ 25°C:
10A
Rds On (Max) @ Id, Vgs:
PLEASE REFER TO DATASHEET
Vgs(th) (Max) @ Id:
PLEASE REFER TO DATASHEET
Gate Charge (Qg) (Max) @ Vgs:
5V
Input Capacitance (Ciss) (Max) @ Vds:
1700pF
Frequency:
PLEASE REFER TO DATASHEET
Current Rating (Amps):
10A
Noise Figure:
PLEASE REFER TO DATASHEET
Voltage - Rated:
800V
Drive Voltage (Max Rds On, Min Rds On):
PLEASE REFER TO DATASHEET
Vgs (Max):
PLEASE REFER TO DATASHEET
IGBT Type:
MOSFET
Configuration:
Single
Input Capacitance (Cies) @ Vce:
1700pF
Input:
1700pF
NTC Thermistor:
PLEASE REFER TO DATASHEET
Voltage - Breakdown (V(BR)GSS):
800v
Current - Drain (Idss) @ Vds (Vgs=0):
100UA
Current Drain (Id) - Max:
100UA
Voltage - Cutoff (VGS off) @ Id:
800v
Resistance - RDS(On):
PLEASE REFER TO DATASHEET
Voltage:
800V
Voltage - Output:
800v
Voltage - Offset (Vt):
+/-30v
Current - Gate to Anode Leakage (Igao):
PLEASE REFER TO DATASHEET
Current - Valley (Iv):
10A
Current - Peak:
40A
Applications:
Industrial Inverters &Servo
Package:
TO-220F
Datasheet:
Plz Contact
Transistor Type:
MOSFET
BVCE(V):
800V
IC(@100℃):
10A
VDD:
50V
RDS(on)typ:
VGS:
10V
Operating Tempera:
-55 to +150℃
Packaging:
Through Hole
Supply Ability
Supply Ability:
1000 Piece/Pieces per Day
Packaging & Delivery

original mosfet transistors 10N80 10A/800V TO-220F  N channel power mosfet JFFM10N80C

 

Product Description

 

transistor MOSFET

1. RoHS authentication & lead free
2. Advantage supply
3. Large inventory
4. Industry top 10

 

This Power MOSFET is produced using advanced
planar stripe DMOS technology. This advanced
technology has been especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices
are well suited for high efficiency switched mode power
supplies, active power factor correction based on half
bridge topology.

 

Packaging Original packaging
Type IGBT 
BVCE(V) 800V
IC(@100℃) 10
 Part Status  Active
 package   TO-220F
 STORAGE  Emperature ---55 to +150℃
 Operating Temperature --55 to +150℃
 Mounting Type Through Hole
Base Part Number  JFFM10N80C

 

 
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