low dark current sic uv Photodiode for Oil Drop Monitoring

Germany SGLUX sic uv Photodiode SG01D–5LENS Description About Material Silicon Carbide (SiC)

SiC has unique properties, can withstand high-intensity radiation, is almost insensitive to visible light, produces low dark current, fast response and low noise. These properties make SiC an excellent material for use in visible dead zone semiconductor UV detectors. SiC detectors can operate at temperatures up to 170 ° C (338 ° F). The temperature coefficient of the signal (response rate) is also very low, < 0, 1% / K. Due to the low noise (fA level dark current), extremely low UV radiation intensity can be effectively detected. Please note that this device requires a corresponding amplifier. (See the typical circuit on page 3.)

 Germany SGLUX sic uv Photodiode SG01D–5LENS option

SiC photodiodes are available in seven different effective sensitive areas, from 0.06 mm2 to 36 mm2. The standard version is the broadband UVA-UVB-UVC.

Four filtered versions result in a tighter sensitization range. All photodiodes have a sealed metal housing (TO type), a 5.5mm diameter TO18 housing or a 9.2mm TO5 housing. Further options are 2 pins (1 insulation, 1 ground) or 3 pins (2 insulation, 1 ground).

Germany SGLUX sic uv Photodiode SG01D–5LENS Features

Broadband UVA+UVB+UVC, PTB reported high stability for flame detection

Radiation sensitive area A = 11,0 mm2
TO5 sealed metal case and condenser, 1 insulated pin and 1 ground pin

10μW/cm2 peak radiation yields approximately 350 nA

 Germany SGLUX sic uv Photodiode SG01D–5LENS Parameters

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