high power rf transistor mosfet IRF530NPBF electronic transformer Diodes Transistors Thyristors auto part number cross reference

Model Number:

IRF530NPBF

Type:

MOSFET 

Place of Origin:

Germany

Brand Name:

Infineo

D/C:

2022

Package Type:

SOT-23-3

Application:

Standard

Supplier Type:

Original manufacturer, ODM, Agency, Retailer, Other

Media Available:

datasheet, Photo, EDA/CAD Models, Other

Brand:

Mosfet

Current - Collector (Ic) (Max):

17A

Voltage - Collector Emitter Breakdown (Max):

Standard

Vce Saturation (Max) @ Ib, Ic:

Standard

Current - Collector Cutoff (Max):

Standard

DC Current Gain (hFE) (Min) @ Ic, Vce:

Standard

Power - Max:

Standard

Frequency - Transition:

Standard

Operating Temperature:

-55 ℃~150 ℃

Mounting Type:

Surface Mount

Package / Case:

SOT-23-3, TO-220AB

Resistor - Base (R1):

Standard

Resistor - Emitter Base (R2):

Standard

FET Type:

Standard

FET Feature:

Standard

Drain to Source Voltage (Vdss):

100 V, 100 V

Current - Continuous Drain (Id) @ 25°C:

100 V

Rds On (Max) @ Id, Vgs:

Standard

Vgs(th) (Max) @ Id:

Standard

Gate Charge (Qg) (Max) @ Vgs:

Standard

Input Capacitance (Ciss) (Max) @ Vds:

Standard

Frequency:

Standard

Current Rating (Amps):

Standard

Noise Figure:

Standard

Power - Output:

Standard

Voltage - Rated:

Standard

Drive Voltage (Max Rds On, Min Rds On):

Standard

Vgs (Max):

Standard

IGBT Type:

Standard

Configuration:

Standard

Vce(on) (Max) @ Vge, Ic:

Standard

Input Capacitance (Cies) @ Vce:

Standard

Input:

Standard

NTC Thermistor:

Standard

Voltage - Breakdown (V(BR)GSS):

Standard

Current - Drain (Idss) @ Vds (Vgs=0):

Standard

Current Drain (Id) - Max:

Standard

Voltage - Cutoff (VGS off) @ Id:

Standard

Resistance - RDS(On):

Standard

Voltage:

Standard

Voltage - Output:

Standard

Voltage - Offset (Vt):

Standard

Current - Gate to Anode Leakage (Igao):

Standard

Current - Valley (Iv):

Standard

Current - Peak:

Standard

Applications:

Standard

Mount:

Through Hole

Number of Pins:

3

Continuous Drain Current (ID):

17 A

Drain to Source Breakdown Voltage:

100 V

Input Capacitance:

920 pF

Fall Time:

25 ns

Gate to Source Voltage (Vgs):

20 V

Max Power Dissipation:

70 W