Product Attribute | Attribute Value |
Manufacturer: | Infineon |
Product Category: | MOSFET |
RoHS: | RoHS |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package / Case: | TO-252-3 |
Transistor Polarity: | P-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Id - Continuous Drain Current: | 40 A |
Rds On - Drain-Source Resistance: | 60 mOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Qg - Gate Charge: | 120 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 3.8 W |
Channel Mode: | Enhancement |
Packaging: | Tube |
Configuration: | Single |
Height: | 2.3 mm |
Length: | 6.5 mm |
Transistor Type: | 1 P-Channel |
Type: | HEXFET Power MOSFET |
Width: | 6.22 mm |
Brand: | Infineon Technologies |
Fall Time: | 55 ns |
Product Type: | MOSFET |
Rise Time: | 63 ns |
Factory Pack Quantity: | 1000 |
Subcategory: | MOSFETs |
Typical Turn-Off Delay Time: | 72 ns |
Typical Turn-On Delay Time: | 14 ns |
Part # Aliases: | SP001570130 |
Unit Weight: | 0.139332 oz |