Silicon Carbide base UV Photodiode Sensor SG01L-A18

                 Silicon Carbide base UV Photodiode Sensor SG01L-A18                  

                                     Model Number :  SG01L-A18                                                  

1.General Features

   Properties of the SG01L-A18 UV photodiode

• UVA-only sensitivity, PTB reported high chip stability
• Active Area A = 1,0 mm2
• TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
• 10µW/cm2 peak radiation results a current of approx. 3,7 nA

2.About the material Silicon Carbide (SiC)
SiC provides  the unique property of  extreme  radiation hardness, near-perfect  visible blindness,  low dark  current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C (338°F). The temperature coeffcient of signal (responsivity)  is also  low, < 0,1%/K. Because of the  low noise (dark current  in the fA range), very  low UV radiation intensities can be measured reliably. Please note that this device needs an appropriate amplifer (see typical circuit on page 3).

 Options

SiC photodiodes are available with seven different ctive chip areas from 0,06 mm2 up to 36 mm2. Standard version is broadband UVA-UVB-UVC. Four fltered versions lead to a tighter sensitivity range. All photodiodes have a hermeti-cally sealed metal housing (TO type), either a 5,5 mm diameter TO18 housing or a 9,2 mm TO5 housing. Further op-tion is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).

3.Specifications