SiC Based Photodiode UV Photodiode Sensor SG01S-18 TO18 Type

         SiC Based Photodiode UV Photodiode Sensor SG01S-18 TO18 Type           
                 Broadband SiC based UV photodiode A = 0,06 mm2                                                       

1.General features:

 Properties of the SG01S–18 UV photodiode
• Broadband UVA+UVB+UVC, PTB reported high chip stability
• Active Area A = 0,06 mm 2
• TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
• 10mW/cm 2 peak radiation results a current of approx. 780 nA

2.About the material Silicon Carbide (SiC)

SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise.These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C (338°F). The temperature coeffiient of signal(responsivity) is also low, < 0,1%/K. Because of the low noise (dark current in the fA range), very low UV radiation intensities can be measured reliably. Please note that this device needs an appropriate amplifir (see typical circuit as below).

Options
SiC photodiodes are available with seven different active chip areas from 0,06 mm 2 up to 36 mm 2. Standard version is broadband UVA-UVB-UVC. Four fitered versions lead to a tighter sensitivity range. All photodiodes have a hermetically sealed metal housing (TO type), either a 5,5 mm diameter TO18 housing or a 9,2 mm TO5 housing. Further option is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).

3.Details: