Monocrystalline silicon wafer is abbreviated as silicon wafer, which is a round sheet material whose atoms are artificially rearranged to be a high-purity semiconductor material with crystal orientation. Since silicon accounts for 26% of the mass of the earth's crust, single crystal silicon is currently the main semiconductor material. Monocrystalline silicon is a form of elemental silicon. When molten elemental silicon is solidified, silicon atoms are arranged in a diamond lattice into many crystal nuclei. If these crystal nuclei grow into crystal grains with the same crystal plane orientation, these crystal grains will combine in parallel to crystallize into single crystal silicon. The purity of the integrated circuit level is required to reach 9N or more (99.9999999%), and the zone-melted monocrystalline silicon wafer can even reach 11N (99.999999999%) or more. It is usually obtained by Czochralski (CZ) and zone melting (FZ) crystal growth, and its crystal orientation is determined by the seed crystal. Monocrystalline silicon is currently the most important semiconductor material, accounting for more than 90% of the semiconductor material market, and is the basic material for information technology and integrated circuits.
Diameter | 2" | 3" | 4" | 5" | 6" | 8" | 12" | ||||||
Grade | Prime | ||||||||||||
Growth Method | CZ | ||||||||||||
Orientation | < 1-0-0 > , < 1-1-1 > , < 1-1-0 > | ||||||||||||
Type/Dopant | P Type/Boron , N Type/Phos, N Type/As, N Type/Sb | ||||||||||||
Thickness (μm) | 279 | 380 | 525 | 625 | 675 | 725 | 775 | ||||||
Thickness Tolerance | Standard ± 25μm, Maximum Capabilities ± 5μm | ± 20μm | ± 20μm | ||||||||||
Resistivity | 0.001 - 100 ohm-cm | ||||||||||||
Surface Finished | P/E , P/P, E/E, G/G | ||||||||||||
TTV (μm) | Standard < 10 um, Maximum Capabilities <5 um | ||||||||||||
Bow/Warp (?m) | Standard <40 um, Maximum Capabilities <20 um | <40μm | <40μm | ||||||||||
Particle | <10@0.5um; <10@0.3um; <10@0.2um; |