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Power Module IGBT JNG75T120LS 75A 1200V
  • Power Module IGBT JNG75T120LS 75A 1200V

Power Module IGBT JNG75T120LS 75A 1200V

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Meorient Import & Export  Co.LTD
Meorient Import & Export Co.LTD
China - Hangzhou
Trading Company
Trade Capacity
Export Percentage
Nearest Port
Hangzhou,Shanghai
Accepted Delivery Terms
Employees
5-10人
Accepted Payment Currency
USD,CNY
Average Lead Time
45 Day(s)
Certifications
Product Specifications
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Product Description
Overview
Quick Details
Model Number:
JNG75T120LS
Type:
IGBT Transistor
Place of Origin:
Guangdong, China
Brand Name:
OEM/ODM
Package Type:
Throught Hole
Application:
MOSFET driver
Supplier Type:
Original manufacturer, ODM
Media Available:
datasheet, Photo
Brand:
Power Module IGBT JNG75T120LS 75A 1200V
Current - Collector (Ic) (Max):
115A
Voltage - Collector Emitter Breakdown (Max):
1200V
Vce Saturation (Max) @ Ib, Ic:
6.5v
Current - Collector Cutoff (Max):
115A
DC Current Gain (hFE) (Min) @ Ic, Vce:
75A
Power - Max:
625w
Frequency - Transition:
PLEASE REFER TO DATASHEET
Operating Temperature:
-40 to +150℃
Mounting Type:
Through Hole
Package / Case:
TO-264
Resistor - Base (R1):
PLEASE REFER TO DATASHEET
Resistor - Emitter Base (R2):
PLEASE REFER TO DATASHEET
FET Type:
PLEASE REFER TO DATASHEET
FET Feature:
Super Junction
Drain to Source Voltage (Vdss):
1200V
Current - Continuous Drain (Id) @ 25°C:
75A
Rds On (Max) @ Id, Vgs:
PLEASE REFER TO DATASHEET
Vgs(th) (Max) @ Id:
PLEASE REFER TO DATASHEET
Gate Charge (Qg) (Max) @ Vgs:
6.5V
Input Capacitance (Ciss) (Max) @ Vds:
7348pF
Frequency:
PLEASE REFER TO DATASHEET
Current Rating (Amps):
75A
Noise Figure:
PLEASE REFER TO DATASHEET
Power - Output:
625W
Voltage - Rated:
1200V
Drive Voltage (Max Rds On, Min Rds On):
PLEASE REFER TO DATASHEET
Vgs (Max):
PLEASE REFER TO DATASHEET
IGBT Type:
IGBT
Configuration:
Single
Vce(on) (Max) @ Vge, Ic:
6.5v
Input Capacitance (Cies) @ Vce:
7348pF
Input:
7348pF
NTC Thermistor:
PLEASE REFER TO DATASHEET
Voltage - Breakdown (V(BR)GSS):
600v
Current - Drain (Idss) @ Vds (Vgs=0):
100UA
Current Drain (Id) - Max:
100UA
Voltage - Cutoff (VGS off) @ Id:
1200v
Resistance - RDS(On):
PLEASE REFER TO DATASHEET
Voltage:
1200V
Voltage - Output:
1200v
Voltage - Offset (Vt):
+/-30v
Current - Gate to Anode Leakage (Igao):
PLEASE REFER TO DATASHEET
Current - Valley (Iv):
75A
Current - Peak:
115A
Applications:
Industrial Inverters &Servo
Package:
TO-264
Datasheet:
Plz Contact
Transistor Type:
IGBT
BVCE(V):
1200V
IC(@100℃):
75A
VTH:
5.5V
IF(@100℃):
75A
VCESAT:
6.5V
Operating Tempera:
-40 to +150℃
Packaging:
Through Hole
Supply Ability
Supply Ability:
1000 Piece/Pieces per Day
Packaging & Delivery

Power Module IGBT JNG75T120LS 75A 1200V

 

Product Description

 

transistor 

1. RoHS authentication & lead free
2. Advantage supply
3. Large inventory
4. Industry top 10

 

 NPT IGBTs offer lower losses and higher energy
efficiency for application such as IH (induction heating),UPS,
general inverter and other soft switching applications.

original electronic components

large quantity in stock

best price, reliable quality, fast delivery

 

 transistor igbt, pnp high power silicon transistor, audio transistor, electronic transistor, transistor regulator, transistor mosfet, bipolar transistor, mosfet smd transistor, mos transistor,motorola rf transistor, transistor unit,

npn power transistor, power mosfet transistor.

 

Packaging Original packaging
Type IGBT 
BVCE(V)  1200V
IC(@100℃)  75A
 Part Status  Active
 package   TO-264
 STORAGE  Emperature --55 to +150℃
 Operating Temperature -40 to +150℃
 Mounting Type Through Hole
Base Part Number JNG75T120LS

 

 
Company Information

 

Application

 

Product Line

 

Packaging & Shipping

 

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