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Polished ALN Aluminum Nitride Ceramic Wafer
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Meo Machinery Co.LTD
China - Hangzhou
Manufacturing and trade
Trade Capacity
Export Percentage
0-30%
Nearest Port
Shanghai
Accepted Delivery Terms
Employees
501-1000 people
Accepted Payment Currency
USD,EUR,JPY
Average Lead Time
90 Day(s)
Certifications
Product Specifications
--Product Description
(ALN) Polished Aluminum Nitride Ceramic Wafer/Innovacera
The aluminum nitride (AlN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic), low
dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic,
high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is
widely used in communication components, high power led, power electronic devices and other
fields.Special spec products can be produced upon requests.
PRODUCT PERFORMANCE
- High thermal conductivity, high flexural strength, high temperature
- Good electrical insulation
- Low dielectric constant and loss
- Able to be laser drilled, metallized, plated and brazed
Regular Dimensions of AlN Substrate/Wafer | ||||||||||||||||
Thickness(mm) | Length*Width(mm) | |||||||||||||||
0.385 | 2″* 2" 50.8*50.8 mm | 3″* 3″ 76.2*76.2mm | 4″* 4″ 101.6*101.6mm | 4.5″* 4.5″ 114.3*114.3mm | ||||||||||||
0.5 | ||||||||||||||||
0.635 | ||||||||||||||||
1.0 | ||||||||||||||||
Diameter(mm) | ||||||||||||||||
1.0 | Φ16 Φ19 | Φ20 Φ26 | Φ30 Φ35 | Φ40 Φ45 | Φ50 Φ52 | Φ60 | Φ75 | Φ80 | ||||||||
PS: Other dimensions which are not listed are available upon your requests. | ||||||||||||||||
Product Features
1.Uniform microstructure
2.High thermal conductivity* (70-180 Wm-1K-1), tailored via processing conditions and additives
3.High electrical resistivity
4.Thermal expansion coefficient close to that of Silicon
5.Resistance to corrosion and erosion
6.Excellent thermal shock resistance
7.Chemically stable up to 980°C in H2 and CO2 atmospheres, and in air up to 1380°C (surface oxidation
occurs around 780°C; the surface layer protects the bulk up to 1380°C).
Application
- RF / Microwave Components
- Laser Diode Sub-mounts
- LED Chip Sub-mount
- Microelectronic Packages
- Transistors
- High Thermal Conductivity Substrates
for LED & Power Electronics
- Substrates for Power Electronics
Material Properties of Aluminum Nitride Substrate/Wafer | ||
Property Content | Property Index | |
Density(g/cm³) | 3.335 | |
Resistance to Thermal Shock | No Cracks | |
Thermal conductivity(30℃, W/m.k) | ≥170 | |
Linear expansion coefficient (/℃, 5℃/min, 20-300℃) | 2.805×106 | |
Flexural strength (MPa) | 382.7 | |
Volume Resistivity (Ω.cm) | 1.4×1014 | |
Dielectric constant(1MHz) | 8.56 | |
Chemical Durability (mg/cm²) | 0.97 | |
Dielectric strength (KV/mm) | 18.45 | |
Surface roughness Ra(μm) | 0.3~0.5 | |
Camber (length‰) | ≤2‰ | |
Appearance/ Color | Dense/ Dark Gray | |
Note: The general characteristics of the materials described above were derived from laboratory test performed by Innovacera from time on sample quantities. Actual characteristics of production lots may vary. | ||
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