Original new BFG425W 425W sot343 RF Bipolar NPN 25 GHz wideband transistor

Model Number:

BFG425W

Type:

RF Transistor, RF Bipolar Small Signal

Place of Origin:

Malaysia

Brand Name:

Original

D/C:

18+

Package Type:

Surface Mount

Application:

General Purpose

Supplier Type:

Agency

Brand:

RF TRANS NPN 4.5V 25GHZ CMPAK-4

Current - Collector (Ic) (Max):

30mA

Voltage - Collector Emitter Breakdown (Max):

4.5V

Vce Saturation (Max) @ Ib, Ic:

-

Current - Collector Cutoff (Max):

-

DC Current Gain (hFE) (Min) @ Ic, Vce:

50 @ 25mA,2V

Power - Max:

135mW

Frequency - Transition:

25GHz

Operating Temperature:

150°C

Mounting Type:

Surface Mount

Package / Case:

SC-82A,SOT-343

Resistor - Base (R1):

-

Resistor - Emitter Base (R2):

-

FET Type:

-

FET Feature:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Input Capacitance (Ciss) (Max) @ Vds:

-

Frequency:

-

Current Rating (Amps):

-

Noise Figure:

-

Power - Output:

-

Voltage - Rated:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs (Max):

-

IGBT Type:

-

Configuration:

Single

Vce(on) (Max) @ Vge, Ic:

-

Input Capacitance (Cies) @ Vce:

-

Input:

-

NTC Thermistor:

-

Voltage - Breakdown (V(BR)GSS):

-

Current - Drain (Idss) @ Vds (Vgs=0):

-

Current Drain (Id) - Max:

-

Voltage - Cutoff (VGS off) @ Id:

-

Resistance - RDS(On):

-

Voltage:

-

Voltage - Output:

-

Voltage - Offset (Vt):

-

Current - Gate to Anode Leakage (Igao):

-

Current - Valley (Iv):

-

Current - Peak:

-

Applications:

wideband

Product Category:

RF Bipolar Transistors

Technology:

Si

Transistor Polarity:

NPN

DC Collector/Base Gain hfe Min:

50

Emitter- Base Voltage VEBO:

1V

Operating Frequency:

25 GHz

Packaging:

Reel

Unit Weight:

0.000207 oz

1 REEL:

3000 PIECES

Supply Ability:

50000 Piece/Pieces per Day