Original genuine FGH75T65UPD Electronics power IGBT Transistor price

Model Number:

FGH75T65UPD

Type:

IGBT

Place of Origin:

Japan

Brand Name:

Original

D/C:

19+

Package Type:

Throught Hole

Application:

Power Transistor

Supplier Type:

Agency

Cross Reference:

-

Media Available:

datasheet

Brand:

IGBT 650V 150A 375W TO-247AB

Current - Collector (Ic) (Max):

150A

Voltage - Collector Emitter Breakdown (Max):

650V

Vce Saturation (Max) @ Ib, Ic:

-

Current - Collector Cutoff (Max):

-

DC Current Gain (hFE) (Min) @ Ic, Vce:

-

Power - Max:

375W

Frequency - Transition:

-

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-247-3

Resistor - Base (R1):

-

Resistor - Emitter Base (R2):

-

FET Type:

-

FET Feature:

Not Applicable

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Input Capacitance (Ciss) (Max) @ Vds:

-

Frequency:

-

Current Rating (Amps):

-

Noise Figure:

-

Power - Output:

-

Voltage - Rated:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs (Max):

-

IGBT Type:

Trench Field Stop, Trench Field Stop

Configuration:

Single

Vce(on) (Max) @ Vge, Ic:

2.3V @ 15V, 75A

Input Capacitance (Cies) @ Vce:

-

Input:

-

NTC Thermistor:

-

Voltage - Breakdown (V(BR)GSS):

-

Current - Drain (Idss) @ Vds (Vgs=0):

-

Current Drain (Id) - Max:

-

Voltage - Cutoff (VGS off) @ Id:

-

Resistance - RDS(On):

-

Voltage:

-

Voltage - Output:

-

Voltage - Offset (Vt):

-

Current - Gate to Anode Leakage (Igao):

-

Current - Valley (Iv):

-

Current - Peak:

-

Applications:

UPS Digital Power Generator

Quality:

100%Original genuine

Description:

IGBT Transistors 650V 150A 187W

Product Category:

IGBT Transistors

Technology:

Si

Gate-Emitter Leakage Current:

400 nA

Test Condition:

400V, 75A, 3Ohm, 15V

Input Type:

Standard

Gate Charge:

385nC

Td (on/off) @ 25°C:

32ns/166ns