NCE MOSFET transistor 40V 80A TO-263 NCEP40P80D P-Channel

Model Number:

NCEP40P80D

Type:

MOSFET 

Place of Origin:

China

Brand Name:

NCEPOWER

D/C:

21+

Package Type:

Surface Mount

Application:

DC/DC Converter

Supplier Type:

Original manufacturer

Media Available:

datasheet, Photo

Brand:

transistor

Current - Collector (Ic) (Max):

-

Voltage - Collector Emitter Breakdown (Max):

-

Vce Saturation (Max) @ Ib, Ic:

-

Current - Collector Cutoff (Max):

-

DC Current Gain (hFE) (Min) @ Ic, Vce:

-

Power - Max:

150W

Frequency - Transition:

-

Operating Temperature:

-55 TO +175

Mounting Type:

Surface Mount

Package / Case:

TO-263

Resistor - Base (R1):

-

Resistor - Emitter Base (R2):

-

FET Type:

P-Channel

FET Feature:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Input Capacitance (Ciss) (Max) @ Vds:

-

Frequency:

-

Current Rating (Amps):

80A

Noise Figure:

-

Power - Output:

150W

Voltage - Rated:

40V

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs (Max):

-

IGBT Type:

-

Configuration:

-

Vce(on) (Max) @ Vge, Ic:

-

Input Capacitance (Cies) @ Vce:

-

Input:

-

NTC Thermistor:

-

Voltage - Breakdown (V(BR)GSS):

-

Current - Drain (Idss) @ Vds (Vgs=0):

-

Current Drain (Id) - Max:

-

Voltage - Cutoff (VGS off) @ Id:

-

Resistance - RDS(On):

-

Voltage:

-

Voltage - Output:

-

Voltage - Offset (Vt):

-

Current - Gate to Anode Leakage (Igao):

-

Current - Valley (Iv):

-

Current - Peak:

-

Applications:

Power MOSFET

Supply Ability:

9999999 Piece/Pieces per Day