Microwave Plasma CVD Machine Graphene CVD for SiO2 Si3N4 SiC Graphene Coating
PECVD system, by ionizing atom-containing gas with microwave or radio frequency,create active plasma locally,which will react easily to deposit and form the expected thin film. It widely used to product high-quality SiO2film ,Si3N4 film,diamond film, hard thin film ,optical thin film,CNT,C/C composite materials,SiC coating, Graphene etc.
Technical Parameter | |||||
Model | DM-14ST-PECVD | Max Temp. | 1400 | Tube Diameter(mm) | 50-100 |
Tube Length(mm) | 1500 | Temp. zone | 3 | Length of heating zone(mm) | 200+200+200 |
Power | 11kw | Voltage | AC220V50Hz | Furnace tube material | corundum |
RF power | 500w | RF frequency | 13.56MHz | RF interface | 50Ω N-Type |
Vacuum | 5*10(-3)Pa | Noise | <50dB | Barometer | 0-500sccm |
The working temperature, the number of temperature zones, the length and diameter of the heating zone, and the degree of vacuum can all be customized!
Q1. How is your company's product after-sales service system?
A. We have professional pre-sales and after-sales departments and
can respond to you within 8 hours to resolve any technical issues.
Q2. How about the quality guarantee period?
A:2 years, exclude irrationally operating and consumable parts.
Q3. How about your products quality?
CE certification available and twice test before shipping.
Q4. What's your delivery time?
Conventional model needs 3 days.35 days for customized products
Q5. Are you a manufacturer or a trading company?
We are a factory with 10 years experience in the field.