Jeking MOSFET P80PF55 P-CH 55V 80A TO-220 STP80PF55

Model Number:

STP80PF55

Type:

Transistor

Place of Origin:

Johor, Malaysia

Brand Name:

Original Brand

D/C:

-

Package Type:

Throught Hole

Application:

-

Cross Reference:

-

Brand:

MOSFET P-CH 55V 80A TO-220

Current - Collector (Ic) (Max):

-

Voltage - Collector Emitter Breakdown (Max):

-

Vce Saturation (Max) @ Ib, Ic:

-

Current - Collector Cutoff (Max):

-

DC Current Gain (hFE) (Min) @ Ic, Vce:

-

Power - Max:

-

Frequency - Transition:

-

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-220-3

Resistor - Base (R1):

-

Resistor - Emitter Base (R2):

-

FET Type:

P-Channel, P-Channel

Drain to Source Voltage (Vdss):

55V

Current - Continuous Drain (Id) @ 25°C:

80A (Tc)

Rds On (Max) @ Id, Vgs:

18mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:

4V @ 250uA, 4V @ 250uA

Gate Charge (Qg) (Max) @ Vgs:

258nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

5500pF @ 25V

Frequency:

-

Current Rating (Amps):

-

Noise Figure:

-

Power - Output:

-

Voltage - Rated:

-

Drive Voltage (Max Rds On, Min Rds On):

10V

Vgs (Max):

±16V

IGBT Type:

-

Configuration:

-

Vce(on) (Max) @ Vge, Ic:

-

Input Capacitance (Cies) @ Vce:

-

Input:

-

NTC Thermistor:

-

Voltage - Breakdown (V(BR)GSS):

-

Current - Drain (Idss) @ Vds (Vgs=0):

-

Current Drain (Id) - Max:

-

Voltage - Cutoff (VGS off) @ Id:

-

Resistance - RDS(On):

-

Voltage:

-

Voltage - Output:

-

Voltage - Offset (Vt):

-

Current - Gate to Anode Leakage (Igao):

-

Current - Valley (Iv):

-

Current - Peak:

-

Applications:

-

Part Number:

STP80PF55

Description:

MOSFET P-CH 55V 80A TO-220

Drain to Source Voltage:

55V

Current @ 25°C:

80A (Tc)

Gate Charge @ Vgs:

258nC @ 10V

Input Capacitance @ Vds:

4V @ 250uA

Power Dissipation (Max):

300W (Tc)

Supplier Device Package:

TO-220AB

Supply Ability:

88000 Piece/Pieces per Day Standar Packing