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Indium Phosphide Based Epitaxial Wafer
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Meorient Import & Export Co.LTD
China - Hangzhou
Trading Company
Trade Capacity
Export Percentage
Nearest Port
Hangzhou,Shanghai
Accepted Delivery Terms
Employees
5-10人
Accepted Payment Currency
USD,CNY
Average Lead Time
45 Day(s)
Certifications
Product Specifications
--Product Description
Product Description
| Description | Application | Wavelength Range |
| InP Based Epi-wafer | FP laser | ~1310nm; ~1550nm;~1900nm |
| DFB laser | 1270nm~1630nm | |
| Avalanche photo-detector | 1250nm~1600nm | |
| Photo-detector | 1250nm~1600nm/>2.0um (InGaAs absorptive layer);<1.4μm (InGaAsP absorptive layer) |
| Product Name |
| High Purity Indium Phosphide Polycrystalline Substrate Sheet |
| Iron Doped Indium Phosphide Crystal |
| N-type and P-type Indium Phosphide Crystal |
| 4 Inch Indium Phosphide Single Crystal Ingot |
| Indium Phosphide Based Epitaxial Wafer |
| Indium Phosphide Semiconductor Crystal Substrate |
| Indium Phosphide Single Crystal Substrate |
| Indium Antimonide Single Crystal Substrate |
| Indium Arsenic Single Crystal Substrate |
Packaging & Shipping
| Packing: | 50KGs Iron Drum or 1000KGs Jumb Bag or packing as per request. |
| Storare: | Storing in sealed, dry and cool condition, not exposing to air for long time, avoiding moisture. |
| Characteristics: | Pink powder, slightly soluble in inorganic acid, insoluble in water. |
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