CNGE is a professional new material technology enterprise engaged in R&D, production, sales and recycling of rare metal
"germanium" as the core and other advanced high-end infrared optical materials, optical components and other High-Tech materials.
Products are widely used in aerospace, solar photovoltaic, infrared field, electronic communications, security camera, automobile,
medical treatment, fire protection, industry and other fields.
The product line covers all kinds of products including GeO2, Organic germanium (Ge-132), germanium ingot, germanium single
crystal, wafers (Ge/ InP / GaAs), Optics ( Ge, Si, ZnS, ZnSe, Chalcogenide Glasses, MgF2, CaF2, BaF2) , We also produce Electronic
Grade Trichlorosilane (TCS) and IR zoom sights.
Welcome to TradeChina
InP Wafer / Ge Wafer / GaAs Wafer Epi Wafers
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Meorient Import & Export Co.LTD
China - Hangzhou
Trading Company
Trade Capacity
Export Percentage
Nearest Port
Hangzhou,Shanghai
Accepted Delivery Terms
Employees
5-10人
Accepted Payment Currency
USD,CNY
Average Lead Time
45 Day(s)
Certifications
Product Specifications
--Product Description
Product Description
Indium phosphide (InP) is a iii-V compound with sphalerite crystal structure. The lattice constant is 5.87×10-10 m, the band gap width of 1.34 EV, and the mobility is 3000~4500cm2/(V.S) at room temperature.
InP crystals have many advantages, such as high saturated electron drift speed, strong radiation resistance, good thermal
conductivity, and high photoelectric conversion efficiency. They are widely used in optical communication, high-frequency
millimeter-wave devices, photoelectric integrated circuits and solar cells for outer space, etc. Future component requirements will be characterized by high speed, high frequency and high power to link applications in the field of 5G communication, automotive electronics and optical communication
InP crystals have many advantages, such as high saturated electron drift speed, strong radiation resistance, good thermal
conductivity, and high photoelectric conversion efficiency. They are widely used in optical communication, high-frequency
millimeter-wave devices, photoelectric integrated circuits and solar cells for outer space, etc. Future component requirements will be characterized by high speed, high frequency and high power to link applications in the field of 5G communication, automotive electronics and optical communication
Outstanding electrical properties of InP semiconductor
1. InP has the advantages of high electron peak drift velocity, high band gap width and high thermal conductivity. The direct transition band gap of InP is 1.35ev, which corresponds to the band with the lowest transmission loss in optical communication;
Under high electric field, the electron peak drift velocity is higher than that in GaAs, which is a good material for preparing
ultra-high speed and UHF devices;
InP is an important substrate material: preparation of semi - insulator single crystal
2. The thermal conductivity is higher than that of GaAs, and the heat dissipation performance is better.
3. Compared with GaAs, InP has the following advantages in device fabrication
The current peak to valley ratio of InP devices is higher than that of GaAs devices, so InP devices have higher conversion
efficiency than GaAs devices;
The time constant of inertia energy is only half of that of GaAs, so the limit of its working frequency is twice as high as that of GaAs devices;
The thermal conductivity is higher than that of GaAs, which is more conducive to the fabrication of CW devices;
InP devices based on InP materials have better noise characteristics;
Under high electric field, the electron peak drift velocity is higher than that in GaAs, which is a good material for preparing
ultra-high speed and UHF devices;
InP is an important substrate material: preparation of semi - insulator single crystal
2. The thermal conductivity is higher than that of GaAs, and the heat dissipation performance is better.
3. Compared with GaAs, InP has the following advantages in device fabrication
The current peak to valley ratio of InP devices is higher than that of GaAs devices, so InP devices have higher conversion
efficiency than GaAs devices;
The time constant of inertia energy is only half of that of GaAs, so the limit of its working frequency is twice as high as that of GaAs devices;
The thermal conductivity is higher than that of GaAs, which is more conducive to the fabrication of CW devices;
InP devices based on InP materials have better noise characteristics;
Application
1. Photoelectric devices, including light source (LED, LD) and detector (PD, APD avalanche photodetector), are mainly used in optical fiber communication system.
2. The optoelectronic integrated circuit (OEIC), which integrates lasers, photodetectors and amplifiers, is an essential
component of the new generation of 40Gb / s communication system, which can effectively improve the reliability of devices and reduce the size of devices.
3. The band gap of InP is 1.34ev. InP solar cells with high conversion efficiency and high radiation resistance are used in space satellite solar cells, which play an important role in the development and utilization of future aviation technology.
4. Electronic devices include high-speed and high-frequency microwave devices (metal insulated field effect transistor MISFET, HEMT high electron mobility transistor and HBT heterojunction transistor)
5. InP based devices are also widely used in millimeter wave communication, anti-collision system, image sensor and other new fields.
2. The optoelectronic integrated circuit (OEIC), which integrates lasers, photodetectors and amplifiers, is an essential
component of the new generation of 40Gb / s communication system, which can effectively improve the reliability of devices and reduce the size of devices.
3. The band gap of InP is 1.34ev. InP solar cells with high conversion efficiency and high radiation resistance are used in space satellite solar cells, which play an important role in the development and utilization of future aviation technology.
4. Electronic devices include high-speed and high-frequency microwave devices (metal insulated field effect transistor MISFET, HEMT high electron mobility transistor and HBT heterojunction transistor)
5. InP based devices are also widely used in millimeter wave communication, anti-collision system, image sensor and other new fields.
InP Semi-insulating Wafers | ||||||
Item | Unit | Specifications | Note | |||
Crystal growth method | VGF | |||||
Dopant | Fe | |||||
Diameter | inch | 2",3", 4" | ||||
Wafer Orientation | -100 | Other orientations | ||||
available | ||||||
Off Orientation | <111>/<110> | |||||
Off Angle | ° | 0° | Other angle | |||
available | ||||||
OF/IF | US,EJ | |||||
Resistivity(at RT) | ohm.cm | ≥0.5×10 7 | ||||
Mobility | cm2/v.s | ≥1000 | ||||
Etch Pit Density（EPD-Ave） | /cm2 | ≤5000 | Upon customer requirement | |||
Laser Marking | Upon request | |||||
Thickness | μm | (350-675) ±25 | Upon customer requirement | |||
TTV(P/P) | μm | ≤10 | ||||
TTV(P/E) | μm | ≤15 | ||||
Warp | μm | ≤15 | ||||
Surface | Side1 | Polished/Etched | ||||
Side2 | Polished/Etched | |||||
Epi-ready | Yes | |||||
Package | Cassette or | |||||
Single wafer container | ||||||
InP Semiconducting Wafers | ||||||||||||
Item | Unit | Specifications | Note | |||||||||
Crystal growth method | VGF | |||||||||||
Diameter | inch | 2",3", 4" | ||||||||||
Wafer Orientation | -100 | Other orientations | ||||||||||
available | ||||||||||||
Off Orientation | <111>/<110> | |||||||||||
Off Angle | ° | 0° | Other angle | |||||||||
available | ||||||||||||
OF/IF | US, EJ | |||||||||||
Conduct Type | (n-type) | (p-type) | ||||||||||
Dopant | S,Sn | Undoped | Zn | |||||||||
Carrier Concentration | cm-3 | (0.8-8)×10 18 | (1-10)×10 15 | (0.8-8)×10 18 | ||||||||
Mobility | cm2/v.s | 1000-2500 | 3000-5000 | 50-100 | ||||||||
Etch Pit Density（EPD-Ave） | /cm2 | ≤5000 | ≤5000 | ≤500 | ||||||||
Laser Marking | Upon request | |||||||||||
Thickness | μm | (350-675) ±25 | Upon customer requirement | |||||||||
TTV(P/P) | μm | ≤10 | ||||||||||
TTV(P/E) | μm | ≤15 | ||||||||||
Warp | μm | ≤15 | ||||||||||
Surface | Side1 | Polished/Etched | ||||||||||
Side2 | Polished/Etched | |||||||||||
Epi-ready | Yes | |||||||||||
Package | Cassette or | |||||||||||
Single wafer container | ||||||||||||
Germanium metal and related products
1, Solar grade germanium wafers
2, Germanium monocrystals (Polycrystal)
3, Germanium dioxide (GeO2)
4, Organic germanium
5, Zone melting germanium ingots
2, Germanium monocrystals (Polycrystal)
3, Germanium dioxide (GeO2)
4, Organic germanium
5, Zone melting germanium ingots
6, Germanium granule
Company profile
Why choose us
1, 60 year’s experience
CNGE has 60 year’s experience on R&D, production, sales of rare metal "Germanium" as the core and other infrared materials, optical components and wafers.
2, one-stop-service for Germanium products
We provide “one-stop-service” for Germanium products from GeO2, Organic germanium (Ge-132), germanium ingot, germanium single crystal, infrared optical component and assembling. We are master at Germanium products and have a very good competitive price.
3, Full coverage of infrared optical component
Except Germanium, we are able also to manufacture other infrared optical components like Si, ZnS, ZnSe, Chalcogenide Glasses, MgF2, CaF2, BaF2.
4, Domestic market leader of Germanium solar wafers
CNGE has dominated the domestic market for our Ge wafers (space solar using)
5, Professional R & D team
CNGE has more than 50 high tech talents and professional R & D team composed of a number of workers with degree of Ph.D., master and bachelor as well as more than 20 engineering and technical personnel.
6, Certification
CNGE is certified by either ISO9001: 2015 quality management system and ISO14001: 2015 environmental management system.
7, Production capacity of main business
CNGE has satisfactory production capacity, as our annually capacity is 1.2 million Germanium solar wafer pieces, 10,000 kg Germanium and 6000kg Silicon optical component.
CNGE has 60 year’s experience on R&D, production, sales of rare metal "Germanium" as the core and other infrared materials, optical components and wafers.
2, one-stop-service for Germanium products
We provide “one-stop-service” for Germanium products from GeO2, Organic germanium (Ge-132), germanium ingot, germanium single crystal, infrared optical component and assembling. We are master at Germanium products and have a very good competitive price.
3, Full coverage of infrared optical component
Except Germanium, we are able also to manufacture other infrared optical components like Si, ZnS, ZnSe, Chalcogenide Glasses, MgF2, CaF2, BaF2.
4, Domestic market leader of Germanium solar wafers
CNGE has dominated the domestic market for our Ge wafers (space solar using)
5, Professional R & D team
CNGE has more than 50 high tech talents and professional R & D team composed of a number of workers with degree of Ph.D., master and bachelor as well as more than 20 engineering and technical personnel.
6, Certification
CNGE is certified by either ISO9001: 2015 quality management system and ISO14001: 2015 environmental management system.
7, Production capacity of main business
CNGE has satisfactory production capacity, as our annually capacity is 1.2 million Germanium solar wafer pieces, 10,000 kg Germanium and 6000kg Silicon optical component.
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