IRFZ44 TO-220 60V 50A Laptop Mosfet IC Power Mosfet Transistor
General Description
The IRFZ44 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.
Features
Typ RDS(ON) = 13 mΩ
VDS=60V; ID=50A@ VGS=10V;
RDS(ON)<16mΩ @ VGS=10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Special designed for convertors and power controls
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Uninterruptible power supply
Power switching application
Hard switched and High frequency circuits
Package Marking and Ordering Information
| Device Marking | Device | Device Package | Reel Size | Tape width | Quantity |
| IRFZ44 | IRFZ44 | T0-220CE | - | - | - |
Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)
Symbol | Parameter | Value | Unit |
VDS | Drain-Source Voltage (VGS=0V) | 60 | V |
VGS | Gate-Source Voltage (VDS=0V) | ±25 | V |
ID(DC) | Drain Current (DC) at Tc=25℃ | 50 | A |
ID(DC) | Drain Current (DC) at Tc=100℃ | 50 | A |
IDM(pluse) | Drain Current-Continuous@ Current-Pulsed (Note 1) | 200 | A |
dv/dt | Peak Diode Recovery Voltage | 5 | V/ns |
PD | Maximum Power Dissipation(Tc=25℃) | 150 | W |
| Derating Factor | 1.0 | W/℃ |
EAS | Single Pulse Avalanche Energy (Note 2) | 1200 | Mj |
TJ,TSTG | Operating Junction and Storage Temperature Range | -55 To 175 | ℃ |
Certificates
Exhibition
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