IRF650 200V 40A to-220 N-Channel mosfet field effect transistor
Product Details
General Description
The YR650 the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switchingperformance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. which accords with the RoHS.
Features
- VDS=200V;ID=40A@ VGS=10V;
RDS(ON)<0.07Ω @ VGS=10V - Fast Switching
- ESD Improved Capability
- Low Reverse transfer capacitances(Typical:78pF)
- 100% Single Pulse avalanche energy Test
Application
- Power switch circuit of adaptor and charger.
Package Marking and Ordering Information
| Device Marking | Device | Reel Size | Tape width | Device Package | Quantity |
| YR650 | YR650 | - | - | To-220 | - |
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
| Symbol | Parameter | Value | Unit |
| VDS | Drain-Source Voltage (VGS=0V) | 200 | V |
| VGS | Gate-Source Voltage (VDS=0V) | ±20 | V |
| ID(DC) | Drain Current (DC) at Tc=25℃ | 40 | A |
| ID(DC) | Drain Current (DC) at Tc=100℃ | 26 | A |
| IDM | Drain Current-Continuous@ Current-Pulsed | 160 | A |
| PD | Power Dissipation(Tc=25℃) | 230 | W |
| PD | Power Dissipation(Tc=100℃) | 150 | W |
| EAS | Single Pulse Avalanche Energy | 840 | mJ |
| IAs | Avalanche Current | 40 | A |
| TJ,TSTG | Operating Junction and Storage Temperature Range | -55 To 150 | ℃ |
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