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IRF640 IC Chip Transistor - FET MOSFET - Single MOSFET N-CH 200V 18A TO220AB
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Meorient Import & Export Co.LTD
China - Hangzhou
Trading Company
Trade Capacity
Export Percentage
Nearest Port
Hangzhou,Shanghai
Accepted Delivery Terms
Employees
5-10人
Accepted Payment Currency
USD,CNY
Average Lead Time
45 Day(s)
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Product Specifications
--Product Description
IRF640 IC Chip Transistor - FET MOSFET - Single MOSFET N-CH 200V 18A TO220AB
| Part Number | Manufacturer | Description | Package | Price |
|
IRF640 |
Original New | New Original Electronic Components Distributor |
Tray Tube Tape&Reel |
Contact us |
FET type
N-channel
technology
MOSFET (metal oxide)
Current continuous drain (ID) at 25 ° C
18A(Tc)
Driving voltage (maximum RDS on, minimum RDS on)
10V
On resistance at different ID and VGS (maximum value)
180 MOH @ 9a, 10V
VGS (th) (maximum) with different IDS
4V @ 250µA
VGS (max)
±20V
FET function
-
Power dissipation (maximum)
125W(Tc)
working temperature
150°C(TJ)
Installation type
Through hole
Supplier device packaging
TO-220AB
Package / enclosure
TO-220-3
Drain source voltage (VDSS)
200 V
Gate charge (QG) (maximum) at different VGS
72 nC @ 10 V
Input capacitance (CISS) (maximum) at different VDS
1560 pF @ 25 V
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