Hot selling high-quality beryllium oxide board at ex-factory price

Hot selling high-quality beryllium oxide board at ex-factory price

The melting temperature range of beryllium oxide substrate 2530C ~2570C, the theoretical density is 3.02g/ cm 3 and in vacuum beryllium oxide substrate can be used for a long time in the 1800C, in an inert gas beryllium oxide substrate can be used in 2000C, in the oxidizing atmosphere can be used in 1800C and then volatilization.

The most prominent properties of beryllium oxide substrate is the large coefficient of thermal conductivity that is similar to aluminum metal and it is alumina ceramics 6-10 times.

Beryllium oxide substrate is dielectric materials that has a unique electrical, thermal and mechanical properties .there is no any other materials exhibit such a integrated performance.

 Beryllium oxide substrate has many characteristics,such as high thermal conductivity, high fusibility, strength, high insulation, low dielectric constant, low dielectric loss and good packaging process adaptability characteristics.

In the microwave technology,electric vacuum technology, nuclear technology,microelectronics and photoelectron technology field beryllium oxide substrate has been paid attention and be applied, especially in high power semiconductor devices, high-power integrated circuit,high power microwave vacuum device and the nuclear reactor;

Forming method:

 Beryllium oxide substrate has 5 forming methods: dry pressing,hot pressing, injection,extrusion and cold isostatic pressing.

Dry press forming can be used in manufacturing thin plates and the wafer (d>=1mm) and cylindrical beryllia ceramics’products (height / diameter <=1.5mm);

hot pressing method is suitable for forming complex shape of beryllium oxide substrate production and hot pressing is used for producing especially beryllium oxide clamping rods.

Beryllium oxide substrate performance data

Compared with other ceramics