High quality 80V 1.5A 1.25W TO-126 Bipolar NPN power transistor BD139 BD140

Model Number:

BD139-16

Type:

Transistor

Place of Origin:

Japan

Brand Name:

Original

D/C:

19+

Package Type:

Throught Hole

Application:

General Purpose

Supplier Type:

Original manufacturer, Agency

Cross Reference:

-

Media Available:

datasheet

Brand:

TRANS NPN 80V 1.5A SOT32

Current - Collector (Ic) (Max):

1.5A, 1.5A

Voltage - Collector Emitter Breakdown (Max):

80V

Vce Saturation (Max) @ Ib, Ic:

500mV @ 50mA, 500mA, 500mV @ 50mA, 500mA

Current - Collector Cutoff (Max):

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:

40 @ 150mA, 2V

Power - Max:

1.25W

Frequency - Transition:

-

Operating Temperature:

150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-126

Resistor - Base (R1):

-

Resistor - Emitter Base (R2):

-

FET Feature:

-

Frequency:

-

Current Rating (Amps):

-

Noise Figure:

-

Power - Output:

-

Voltage - Rated:

-

Drive Voltage (Max Rds On, Min Rds On):

--

Vgs (Max):

-

IGBT Type:

-

Configuration:

Single, Single

Vce(on) (Max) @ Vge, Ic:

-

Input Capacitance (Cies) @ Vce:

-

Input:

-

NTC Thermistor:

-

Voltage - Breakdown (V(BR)GSS):

-

Current - Drain (Idss) @ Vds (Vgs=0):

-

Current Drain (Id) - Max:

-

Voltage - Cutoff (VGS off) @ Id:

-

Resistance - RDS(On):

-

Voltage:

-

Voltage - Output:

-

Voltage - Offset (Vt):

-

Current - Gate to Anode Leakage (Igao):

-

Current - Valley (Iv):

-

Current - Peak:

-

Applications:

General purpose

Description:

Bipolar Transistors - BJT NPN Silicon Trnsistr

Mounting Style:

Through Hole

Pd - Power Dissipation:

1250 mW

Technology:

Si

Packaging:

Tube

Part Status:

Active

Unit Weight:

0.002116 oz

Supply Ability:

70000 Piece/Pieces per Week