For Graphene Production Machine Plasma Enhanced CVD System
Intelligent type PECVD , PECVD-500A
Furnace
Max. temp | 1200°C |
Heating zone length | 440mm |
Constant zone length | 200mm |
Temp. control | PID automatic control with 30 steps programmable,Operation interface is 7 "industrial control computer |
Tube size | Ø 25,Ø50,Ø60,Ø80,Ø100(optional) |
PE source:
Signal frequency | 13.56 MHz±0.005% |
Power output range | 0-500W |
Max. reflection power | 100W |
RF output interface | 50 Ω, N-type, female |
Power stability | ≤5W |
Gas supply system | Accurate control of gas flow with high precision mass Flowmeter |
Mass Flowmeter reference range(N2) | 100sccm,200sccm 500sccm (optional) |
Accuracy | ±1.5% |
Repeatability precision | ±0.2% |
Working pressure difference range | 0.1~0.5 MPa |
Max. pressure | 3MPa |
Vacuum unit | KF25 series bellows and manual stopper valves |
vacuum | 10-1 pa |
The value can be displayed intuitively by the digital display vacuum tester | |
Main feature:
PECVD is to produced plasma by glow discharge .In the glow discharge plasma, the electron density is 109-1012cm3 and the temperature of the electron gas is 10-100 times higher than that of the ordinary gas molecule, which results in the chemical reaction of the gaseous substance containing the thin film. Thus, a new preparation technique for the growth of thin film materials is developed. By reactive gas discharge, the reaction characteristics of non-equilibrium plasma are effectively utilized, and the energy supply mode of the reaction system is fundamentally changed. The low temperature plasma chemical vapor deposition method has all the advantages of the gas phase method, and the process is simple.
Set vacuum unit, gas supply system, RF source, automatic propulsion, heating furnace in on.All the controls are integrated into the touch screen control interface to make the device more intelligent and easy to operate.
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