Specification | 2'' |
Diameter | 50.5±0.5 |
Thickness | 500±25 |
Crystal orientation | (100)(111) |
Length of main positioning edge | 16±2 |
Length of secondary positioning edge | 8±1 |
Flatness | <10 |
Curvature | <10 |
Warpage | <10 |
Product Name |
High Purity Indium Phosphide Polycrystalline Substrate Sheet |
Iron Doped Indium Phosphide Crystal |
N-type and P-type Indium Phosphide Crystal |
4 Inch Indium Phosphide Single Crystal Ingot |
Indium Phosphide Based Epitaxial Wafer |
Indium Phosphide Semiconductor Crystal Substrate |
Indium Phosphide Single Crystal Substrate |
Indium Antimonide Single Crystal Substrate |
Gallium Antimonide Crystal Substrate |
Indium Arsenic Single Crystal Substrate |
Packing: | 50KGs Iron Drum or 1000KGs Jumb Bag or packing as per request. |
Storare: | Storing in sealed, dry and cool condition, not exposing to air for long time, avoiding moisture. |
Characteristics: | Pink powder, slightly soluble in inorganic acid, insoluble in water. |