Technology docking: arc heating, instantaneous gasification of gallium, gasified gallium vapor and excess oxygen CVD chemical vapor deposition: 4Ga + 3O2 = 2Ga2O3, does not contain any acid ion; such as: chloride ion, nitrate ion; |
Inspection: GDMS (99.99% purity: all impurity elements are below 100ppm) |
XRD: (the main peak is completely symmetrical); laser particle size analyzer: (particle size: D50 <10 microns); |
Services: provide MSDS and practical protection measures; provide material application solutions; |
Properties: α-Ga2O3 is hexagonal crystal form, β-Ga2O3 belongs to monoclinic crystal form; |
Purity: 99.99% -99.9999%; |
Appearance: white powder; |
Application:It is mainly used for laser, phosphor and luminescent materials. |
Product Name | Purity | Cas No. |
High Purity Bismuth Trioxide | 4N 5N | 1304-76-3 |
High Purity Superfine Bismuth Trioxide | 4N 5N | 1304-76-3 |
High Purity Copper Oxide | 4N 5N 6N | 1317-38-0 |
High Purity Gallium Oxide | 4N 5N 6N | 12024-21-4 |
High Purity Germanium Dioxide | 5N | 1310-53-8 |
High Purity Indium Oxide | 4N 5N 6N | 1312-43-2 |
High Purity Phosphorus Pentoxide | / | 1314-56-3 |
High Purity Lead Oxide | 5N | 1317-36-8 |
High Purity Tellurium Dioxide | 3N 4N 5N | 7446-7-3 |
High Purity Tin Oxide | 5N | 18282-10-5 |
High Purity Antimony Oxide | 4N 5N | 1332-81-6 |
High Purity Zinc Oxide | 4N 5N | 1314-13-2 |