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DG2N65 TO-220F 2A 650V
  • DG2N65 TO-220F 2A 650V

DG2N65 TO-220F 2A 650V

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ShengTing Microelectronics (Shenzhen) Co., LTD
ShengTing Microelectronics (Shenzhen) Co., LTD
China - Shenzhen
Manufacturing and trade
Trade Capacity
Export Percentage
Nearest Port
Accepted Delivery Terms
Employees
101-200 people
Accepted Payment Currency
Average Lead Time
null Day(s)
Certifications
ISO9001
ISO9001
ISO9001
Product Specifications
Package Type
Throught Hole
Brand Name
SHENGTING
Type
Field-Effect Transistor
Model Number
DG2N65
Product Description

  DG2N65 is an N-channel enhancement mode MOSFET, The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization  

  DG2N65S is an N-channel enhancement mode MOSFET, The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization

DG2N65S is an N-channel enhancement mode MOSFET, The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization   

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