DG1N80 is an N-channel enhancement mode MOSFET, The self-aligned planar process and improved terminal
technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for higher efficiency and system miniaturizat
DG1N80 is an N-channel enhancement mode MOSFET, The self-aligned planar process and improved terminal
technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for higher efficiency and system miniaturizat
DG1N80 is an N-channel enhancement mode MOSFET, The self-aligned planar process and improved terminal
technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for higher efficiency and system miniaturizat