DG18N50 is an N-channel enhancement mode MOSFET, which is produced using proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.
DG18N50 is an N-channel enhancement mode MOSFET, which is produced using proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.
DG18N50 is an N-channel enhancement mode MOSFET, which is produced using proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance
the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system
miniaturization.