DG100N10 TO-252 100A 100V
DG100N10Employing the most advanced trench gate technology and the perfect structure design maximizes the power density and significantly reduces the conduction power loss .Meanwhile,the current flows through the chip cell more evenly and stablely.By lowering the gate charge(Qg),especially the charge between gate and drain(Qgd),the switching loss is decreased in the turn-on and turn-off process.Using the state-of-the-art technology,the MOSFET's FOM(Qg×Rdson)achieves the leading level in the industr
DG100N10Employing the most advanced trench gate technology and the perfect structure design maximizes the
power density and significantly reduces the conduction power loss .Meanwhile,the current flows through the chip
cell more evenly and stablely.By lowering the gate charge(Qg),especially the charge between gate and
drain(Qgd),the switching loss is decreased in the turn-on and turn-off process.Using the state-of-the-art
technology,the MOSFET's FOM(Qg×Rdson)achieves the leading level in the industr
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