BD139 SILICON PLANAR EPITAXIAL POWER TRANSISTORS

Model Number:

BD139

Place of Origin:

China

Brand Name:

original

Package Type:

Other

Brand:

TRANS NPN 80V 1.5A SOT-32

Current - Collector (Ic) (Max):

1.5A

Voltage - Collector Emitter Breakdown (Max):

80V

Vce Saturation (Max) @ Ib, Ic:

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max):

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:

40 @ 150mA, 2V

Power - Max:

1.25W

Operating Temperature:

150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-225AA, TO-126-3

VCBO:

80 V

VCEO:

80 V

VEBO:

5 V

IC:

1.5 A

Type:

Other

Supply Ability:

200000 Piece/Pieces per Week