9N90 9A900V/mosfet power amplifier/mitsubishi mosfet power transistor rd15hvf1
General Description
The YR9N90 the silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which
reduce the conduction loss, improve switchingperformance
and enhance the avalanche energy. The transistor can be
used in various power switching circuit for system miniaturiz
ation and higher efficiency. which accords with the RoHS.
Features
VDS=900V;ID=9A@ VGS=10V;
RDS(ON)<1.4Ω @ VGS=10V
Fast Switching
ESD Improved Capability
Low Reverse transfer capacitances(Typical:13pF)
100% Single Pulse avalanche energy Test
Application
Power switch circuit of adaptor and charger.
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
| Symbol | Parameter | Value | Unit |
| VDS | Drain-Source Voltage (VGS=0V) | 900 | V |
| VGS | Gate-Source Voltage (VDS=0V) | ±30 | V |
| ID(DC) | Drain Current (DC) at Tc=25℃ | 9 | A |
| ID(DC) | Drain Current (DC) at Tc=100℃ | 5.8 | A |
| IDM(a1) | Drain Current-Continuous@ Current-Pulsed | 36 | A |
| dv/dt(a3) | Peak Diode Recovery Voltage | 5 | V/ns |
| PD | Maximum Power Dissipation(Tc=25℃) | 137 | W |
| PD | Derating Factor | 1.1 | W/℃ |
| EAS(a2) | Single Pulse Avalanche Energy | 1000 | Mj |
| TL | MaximumTemperature for Soldering | 300 | ℃ |
| TJ,TSTG | Operating Junction and Storage Temperature Range | -55 To 150 | ℃ |
| RθJC | Thermal Resistance,Junction-to-Case | 0.83 | ℃/W |
| RθJA | Junction-to-Ambient | 62 | ℃/W |
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