VCSEL Laser Diode 808nm 850nm 940nm 670nm
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PRODUCT FEATURES
940nm Multimode VCSEL
Narrow spectral width
Oxide isolation technology
39 aperture array
Modulation bandwidth>1Gbps
Relatively small emission area, easy to collimate
APPLICATIONS :
3D Imaging
Gesture recognition
Laser illumination
Medical applications
Broadband access network
Military applications
Ⅰ.Absolute Maximum Ratings
Rating | |
Storage Temperature | -40 to 80℃ |
Case Operating Temperature | -40 to 80℃ |
Relative Humidity | 10% to 90% |
Reverse Power Supply Voltage | 5V |
Maximum Continuous Forward Current | 0.5A |
ESD Exposure(Human Body Model) | 1000V |
Ⅱ.Electro-Optical Characteristics(Top 25 deg C unless otherwise stated)
VCSEL Parameters | Conditions | Symbol | Unit | Min. | Typ. | Max. |
Optical Power Output | IF=0.35A | Po | mW | 180 | 200 | 220 |
Threshold Current | - | Ith | A | - | 0.05 | - |
Slope Efficiency | Po=200mW | η | mW/mA | - | 0.67 | - |
Wall Plug Efficiency | IF=0.35A | WPE | % | - | 25 | - |
Emission Area | - | - | um | - | 226*215 | - |
Peak Wavelength | IF=0.35A | - | nm | 930 | 940 | 950 |
Laser Forward Voltage | IF=0.35A | VF | V | - | 2.10 | 2.50 |
Series Resistance | IF=0.35A | R | Ω | - | 6.00 | 7.14 |
Beam Angle | IF=0.35A | - | Degrees | - | 20 | - |
Wavelength Shift | IF=0.35A | - | nm/℃ | - | 0.07 | - |