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3inch Indium Phosphide InP Wafer for Laser Diode
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Meorient Import & Export Co.LTD
China - Hangzhou
Trading Company
Trade Capacity
Export Percentage
Nearest Port
Hangzhou,Shanghai
Accepted Delivery Terms
Employees
5-10人
Accepted Payment Currency
USD,CNY
Average Lead Time
45 Day(s)
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Product Specifications
--Product Description
2inch 3inch 4inch
Indium phosphide InP Wafer for LD Laser Diode
InP is commonly used in high-power and high-frequency electronics devices because of its superior electron velocity characteristics. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. InP is also used as a substrate for epitaxial InGaAs based opto-electronic devices.
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