Product Attribute | Attribute Value |
Manufacturer: | Infineon |
Product Category: | MOSFET |
Technology: | Si |
Mounting Style: | Through Hole |
Package / Case: | TO-220-3 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 55 V |
Id - Continuous Drain Current: | 110 A |
Rds On - Drain-Source Resistance: | 8 mOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 200 W |
Channel Mode: | Enhancement |
Configuration: | Single |
Transistor Type: | 1 N-Channel |
Brand: | Infineon / IR |
Fall Time: | 65 ns |
Product Type: | MOSFET |
Rise Time: | 101 ns |
Subcategory: | MOSFETs |
Brand Agency | ||||||||
ALTERA | XILINX | Maxim Integrated | Texas Instruments | STMicroelectronics | ||||
Nexperia | Texas Instruments | Murata | Samsung | Yageo |