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300nm-1000nm SI Photodiode
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Meorient Import & Export Co.LTD
China - Hangzhou
Trading Company
Trade Capacity
Export Percentage
Nearest Port
Hangzhou,Shanghai
Accepted Delivery Terms
Employees
5-10人
Accepted Payment Currency
USD,CNY
Average Lead Time
45 Day(s)
Certifications
Product Specifications
--Product Description
300nm-1000nm SI Photodiode
Welcome
Features
1.High response,flat structure of SI PIN detector
2.Low capacitance and low dark current
3.Operating wavelength of 300-1000nm
4.Single-mode fiber coaxial package
Optical & Electrical Characteristics
|
Parameter |
Symbol |
Min. |
Typ. |
Max. |
Unit |
Test Condition |
|
Wavelength Range |
λ |
300 |
- |
1000 |
nm |
- |
|
Power Range |
P |
-70 |
- |
+3 |
dBm |
V,=5V |
|
Active Diameter |
Ad |
|
100 |
|
um |
- |
|
Dark Current |
Id |
- |
0.5 |
1 |
nA |
- |
|
Responsivity |
R |
- |
0.40 |
0.45 |
A/W |
λ=850 nm |
|
Frequency Bandwidth |
Bw |
|
1000 |
|
MHz |
|
|
Capacitance |
Ct |
- |
0.8 |
1 |
Pf |
- |
|
Response Time |
Tr |
- |
- |
1 |
ns |
- |
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