24NM65N high-power power transistor STW24NM65N MOS field effect tube 24NM65

Model Number:

STW24NM65N

Type:

IGBT Transistor

Place of Origin:

Aland Islands

Brand Name:

**

D/C:

19+

Package Type:

Throught Hole

Brand:

MOSFET N-CH 650V 19A TO-247

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-3P

FET Type:

N-Channel

Drain to Source Voltage (Vdss):

650V

Current - Continuous Drain (Id) @ 25°C:

19A (Tc)

Rds On (Max) @ Id, Vgs:

190mOhm 9.5A, 10V

Vgs(th) (Max) @ Id:

4V 250UA

Gate Charge (Qg) (Max) @ Vgs:

70nC 10V

Input Capacitance (Ciss) (Max) @ Vds:

2500pF 50V

Drive Voltage (Max Rds On, Min Rds On):

10V

Vgs (Max):

±25V