2" 4" 6" 2inch 4inch 6inch
N-type Gallium arsenide GaAs Wafer for Microwave/HEMT/PHEMT
Item |
Parameter |
Spec |
Unit |
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1 |
Product Name |
Single Crystal Gallium Arsenide,GaAs Wafer |
|
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2 |
Diameter |
2” |
4” |
mm |
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3 |
Thickness |
350± 20 |
350± 25 |
μm |
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4 |
Dopant |
N/Si |
|
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5 |
Surface Orientation |
2 º , 6 º and 15º± 0. 5º off toward (011/111) |
degree |
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6 |
Primary Flat Orientation Length |
(0-1-1)± 0. 5º 16 ± 1.0 |
(0-1-1)± 1.0º 32.5 ± 1.0 |
degree mm |
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7 |
Secondary Flat Orientation Length |
(0-11)± 0. 5º 8 ± 1.0 |
(0-11)± 0. 5º 18 ± 1.0 |
degree mm |
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8 |
Hall Mobility |
>1500 |
>1500 |
cm2/V.S |
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9 |
Etch Pit Density |
< 2000 |
< 5000 |
cm-2 |
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10 |
Carrier Concentration |
(0.4-2.5) x 1018 |
(0.4-2.5) x 1018 |
cm-3 |
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11 |
TTV |
<10 |
<15 |
μm |
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12 |
Bow |
<10 |
<15 |
μm |
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13 |
Warp |
<10 |
<15 |
μm |
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14 |
Roughness Front Side |
Polished |
Å |
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15 |
Roughness Back Side |
Polished or Etched |
μm |