1000-1200V DO-41 Tapping Diode IN4007 M7 1A 1kv DO-214AC General Silicon Rectifiers Diode 1000v Rectifier 1N4007
Maximum Ratings and Electrical Characteristics
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load. For capacitive load, derate current by 20%
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Symbols |
1N 4001 |
1N 4002 |
1N 4003 |
1N 4004 |
1N 4005 |
1N 4006 |
1N 4007 |
Units |
|
Maximum repetitive peak reverse voltage |
VRMM |
50 |
100 |
200 |
400 |
600 |
800 |
1000 |
Volts |
|
Maximum RMS voltage |
VRMS |
35 |
70 |
140 |
280 |
420 |
560 |
700 |
Volts |
|
Maximum DC blocking voltage |
VDC |
50 |
100 |
200 |
400 |
600 |
800 |
1000 |
Volts |
|
Maximum Average Forward Rectified Current @TA=75 ℃ |
I(AV) |
1.0 |
Amps |
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|
Peak Forward Surge Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load(JEDEC Method) |
IFSM |
30.0 |
Amps |
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|
Maximum forward voltage at 1.0A |
VF |
1.1 |
Volts |
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Maximum DC reverse current TJ=25℃ at rated DC blocking voltage TJ=100℃ |
IR |
5.0 50.0 |
μA |
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|
Typical junction capacitance (Note 1) |
CJ |
15.0 |
pF |
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|
Typical thermal resistance (Note 2) |
RθJA |
26.0 |
℃/W |
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|
Operating Temperature Range |
TJ |
-55 to +125 |
℃ |
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Storage Temperature Range |
TSTG |
-55 to +125 |
℃ |
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Notes:
1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC 2.Thermal resistance junction of ambient
RATINGS AND CHARACTERISTIC CURVES 1N4001 thru 1N4007
Based on the performed tests on submitted sample(s), the results of Lead, Mercury,Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBBs) Polybrominated diphenyl ethers (PBDEs) and Phthalates such as Bis(2-ethylhexyl)phthalate ((DEHP), Butyl benzyl phthalate (BBP), Dibuty phthalate (DBP), and Diisobutyl phthalate (DIBP) comply with the limits as set by RoHS Directive (EU)2015/863 amending Annex ll to Directive 2011/65/EU.
Test ltem(s Cadmium (Cd Lead (Pb) Mercury(Hg)
mg ik
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