Product Category: | IGBT Modules | |
Product: | IGBT Silicon Modules | |
Configuration: | Dual | |
Collector- Emitter Voltage VCEO Max: | 1200 V | |
Collector-Emitter Saturation Voltage: | 2.1 V | |
Continuous Collector Current at 25 C: | 450 A | |
Gate-Emitter Leakage Current: | 400 nA | |
Pd - Power Dissipation: | 1600 W | |
Package / Case: | 62 mm | |
Minimum Operating Temperature: | - 40 C | |
Maximum Operating Temperature: | + 150 C | |
Packaging: | Tray | |
Technology: | Si | |
Mounting Style: | Chassis Mount | |
Maximum Gate Emitter Voltage: | 20 V | |
Product Type: | IGBT Modules | |
Factory Pack Quantity: | 10 | |
Subcategory: | IGBTs | |
Part # Aliases: | SP000370607 FF300R12KT4HOSA1 | |
Unit Weight: | 11.816777 oz |